TSM2301 Datasheet | Taiwan Semiconductor

20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ .. Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities pact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2301CX Packing Tape & Reel Package...