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TSM2301 Datasheet 20v P-channel Enhancement Mode MOSFET

Manufacturer: Taiwan Semiconductor Company

Overview: TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ www.DataSheet4U.

Key Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2301CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature.

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