TSM2301B Description
TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 @ VGS = -4.5V -20 150 @ VGS = -2.5V 190 @ VGS = -1.8V SOT-23 Pin Definition: Drain ID (A) -2.8 -2.0 -2.0.
TSM2301B Key Features
- Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
- Load Switch PA Switch P-Channel MOSFET