TSM2301B - 20V P-Channel MOSFET

Taiwan Semiconductor Company

General Description

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Key Features

Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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TSM2301B 20v p-channel mosfet by Taiwan Semiconductor Company - Datasheet Preview

Datasheet Details

Part number	TSM2301B
Manufacturer	Taiwan Semiconductor Company
File Size	381.28 KB
Description	20V P-Channel MOSFET
Datasheet	TSM2301B Datasheet

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TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 @ VGS = -4.5V -20 150 @ VGS = -2.5V 190 @ VGS = -1.8V SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain ID (A) -2.8 -2.0 -2.0 www.DataSheet4U.com Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch P-Channel MOSFET Ordering Information Part No. TSM2301BCX RF Package SOT-23 Packing 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.