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TSM6968SD - 20V Dual N-Channel MOSFET w/ESD Protected

Datasheet Summary

Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch.

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Datasheet Details

Part number TSM6968SD
Manufacturer Taiwan Semiconductor Company
File Size 196.46 KB
Description 20V Dual N-Channel MOSFET w/ESD Protected
Datasheet download datasheet TSM6968SD Datasheet
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Full PDF Text Transcription

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TSM6968SD Pin assignment: 1. Drain 1 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain 2 www.DataSheet4U.com 20V Dual N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =25mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =35mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM6968SDCA Packing Tape & Reel 3,000/per reel Package TSSOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.
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