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TSM6968D - 20V Dual N-Channel MOSFET w/ESD Protected

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Features

  • — — — — — Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch.

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Datasheet Details

Part number TSM6968D
Manufacturer Taiwan Semiconductor Company
File Size 197.45 KB
Description 20V Dual N-Channel MOSFET w/ESD Protected
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TSM6968D Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain www.DataSheet4U.com 20V Dual N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =22mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =29mΩ Features — — — — — Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM6968DCA Packing Tape & Reel 3,000/per reel Package TSSOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.
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