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TSM6988D - 20V Dual N-Channel MOSFET w/ESD Protected

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Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Dual N-Channel MOSFET.

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Datasheet Details

Part number TSM6988D
Manufacturer Taiwan Semiconductor Company
File Size 362.94 KB
Description 20V Dual N-Channel MOSFET w/ESD Protected
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TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 35 @ VGS = 4.5V 40 @ VGS = 2.5V www.DataSheet4U.com SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 ID (A) 6.0 5.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Dual N-Channel MOSFET Application ● ● Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. TSM6988DCX6 RF Package SOT-26 Packing 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.
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