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TSM6963SD - 20V Dual P-Channel MOSFET

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Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM6963SD
Manufacturer Taiwan Semiconductor Company
File Size 471.88 KB
Description 20V Dual P-Channel MOSFET
Datasheet download datasheet TSM6963SD Datasheet
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Full PDF Text Transcription

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TSM6963SD 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 www.DataSheet4U.com PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 @ VGS = -4.5V -20 42 @ VGS = -2.5V 68 @ VGS = -1.8V ID (A) -4.5 -3 -2 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM6963SDCA RV Package TSSOP-8 Packing 2.5Kpcs / 13” Reel Dual P-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.
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