TSM6981D Datasheet | Taiwan Semiconductor

eatures - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - Load Switch PA Switch Ordering Information Part No. TSM6981DCA RF Package TSSOP-8 Packing T&R Dual P-Channel MOSFET Absolute Maximum Rating (Ta = 25 o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS Limit -20 ±8 -5 -30 -1.0 Unit V V A A A W o o Ta = 25 C Ta = 70 C 1.14 0.73 +150 - 55 to +150 TJ TJ, TSTG Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol...