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TSM8405P - Single P-Channel 1.8V Specified MicroSURF MOSFET

General Description

TSM8405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit.

Key Features

  • Low profile package: less than 0.8mm height when mounted on PCB Occupies only 2.25mm of PCB area 2 Less than 25% of the area of a SSOT-6 Excellent thermal and electrical capabilities Lead free solder bumps available Block Diagram Ordering Information Part No. TSM8405P Packing Tape & Reel Q’ty 3kpcs / 7” Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation (Steady.

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Datasheet Details

Part number TSM8405P
Manufacturer Taiwan Semiconductor Company
File Size 206.33 KB
Description Single P-Channel 1.8V Specified MicroSURF MOSFET
Datasheet download datasheet TSM8405P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM8405P www.DataSheet4U.com Single P-Channel 1.8V Specified MicroSURFTM MOSFET Lateral Power™ for Load Switching and PA Switch VDS = - 12V RDS (on), Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ D S D S S D G G Patent Pending Description Bump Side View TSM8405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit. Features Low profile package: less than 0.8mm height when mounted on PCB Occupies only 2.