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TSM9434
Taiwan Semiconductor
P-Channel Power MOSFET
-20V, -6.4A, 40mΩ
Features
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-
resistance
Application
● Load Switch ● PA Switch
SOP-8
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = -10V VGS = -4.5V
Qg
-20 40 60 19
V mΩ nC
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
VDS VGS
ID
IDM
-20 ±8 -6.4 -3.8 -19.2
Total Power Dissipation @ TA = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3)
PDTOT EAS IAS
2.5 13.
TSM9434 Datasheet
