MBR1050CT Datasheet | Taiwan Semiconductor

FEATURES - Low power loss, high efficiency - Guard ring for over-voltage protection - High surge current capability - pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: TO-220AB Molding pound, UL flammability classification rating 94V-0 Part No. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green pound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.88 g (approximately) TO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 1035 1045 1050 1060 1090 10100 10150 10200 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak repetitive forward current (Rated VR, Square Wave, 20KHz) VRRM VRMS VDC IF(AV) IFRM CT CT CT CT CT CT CT CT 35 45 50 60 90 100 150 200 24 31 35 42 63 70 105 140 35 45 50 60 90 100 150 200 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF= 5 A, TJ=25°C IF= 5 A, TJ=125°C IF= 10 A, TJ=25°C IF= 10 A, TJ=125°C 0.70 0.80 0.85 0.88 VF 0.57 0.65 0.75 0.78 0.80 0.90 0.95 0.98 0.67 0.75 0.85 0.88 Maximum reverse current @ rated VR Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz TJ=25°C TJ=125°C IR d V/dt RθJC TJ TSTG 10 2 10000 1.5 - 55 to +150 - 55 to...