Datasheet Details
| Part number | TSD1858 |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| File Size | 352.81 KB |
| Description | Low Vcesat NPN Transistor |
| Datasheet |
 TSD1858 Datasheet
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General Description
only.
No license, express or implied, to any intellectual property rights is granted by this document.
Key Features
- Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ. ) High BVCEO Ordering Information Part No. TSD1858CH C5G Package TO-251 Packing 75pcs / Tube Structure.
- Epitaxial Planar Type NPN Silicon Transistor Note: āGā denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @ TA=25 C Power Dissipation @ TC=25 C Thermal Resistance - J.