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TSD1858CH - Low Vcesat NPN Transistor

Download the TSD1858CH datasheet PDF. This datasheet also covers the TSD1858 variant, as both devices belong to the same low vcesat npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ. ) High BVCEO Ordering Information Part No. TSD1858CH C5G Package TO-251 Packing 75pcs / Tube Structure.
  • Epitaxial Planar Type NPN Silicon Transistor Note: ā€œGā€ denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @ TA=25 C Power Dissipation @ TC=25 C Thermal Resistance - J.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TSD1858-TaiwanSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Taiwan Semiconductor

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TSD1858 Low Vcesat NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSD1858 Low Vcesat NPN Transistor TO-251 (IPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 180V 160V 1.5A 0.3V @ IC = 1A, IB = 100mA Features ā— ā— Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) High BVCEO Ordering Information Part No.