Datasheet Summary
creat by ART
Taiwan Semiconductor
Features
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB Molding pound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code
- halogen-free, RoHS pliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test...