TSF10H100C - Trench Schottky Rectifier

Product Overview

Taiwan Semiconductor

Datasheet Details

Part number	TSF10H100C
Manufacturer	Taiwan Semiconductor
File Size	238.30 KB
Description	Trench Schottky Rectifier
Datasheet	TSF10H100C Datasheet
Additional preview pages of the TSF10H100C datasheet.

Product details

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 12 10 8 6 4 2 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG.2 TYPICAL FORWARD CHARACTERISTICS 100 TJ=150oC AVERAGE FORWARD CURRENT (A) 10 TJ=125oC 1 TJ=100oC 0.1 TJ=25oC WITH HEATSINK 4in x 6in x 0.25in Al-Plate 0.01 0 0.2 0.4 0.6 0.8 1 1.2 CASE TEMPERATURE (oC) FORWARD VOLTAGE (V) FIG.3 TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT (mA) FIG.4

Features

Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB.

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Published: Jul 10, 2014 |