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TSF10H100C Datasheet Trench Schottky Rectifier

Manufacturer: Taiwan Semiconductor

Overview: creat by ART TSF10H100C Taiwan Semiconductor.

Key Features

  • Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB.

TSF10H100C Distributor