TSF2080C Description
3 TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT (mA) FIG. DS_D1309047 Version:B13 TSF2080C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Unit(mm) Min A B C D E.
TSF2080C Key Features
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- 55 to + 150
- 55 to + 150 MAX. 0.77 0.70 600 20