TSF2080C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Taiwan Semiconductor

Datasheet Details

Part number	TSF2080C
Manufacturer	Taiwan Semiconductor
File Size	186.07 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	TSF2080C Datasheet
Additional preview pages of the TSF2080C datasheet.

Product details

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 0 0 25 50 75 100 (oC) INSTANTANEOUS FORWARD CURRENT (A) FIG.2 TYPICAL FORWARD CHARACTERISTICS 100 TJ=150oC AVERAGE FORWARD CURRENT (A) 10 TJ=125oC TJ=25oC 1 TJ=100oC 0.1 WITH HEATSINK 4in x 6in x 0.25in Al-Plate 125 150 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 CASE TEMPERATURE FORWARD VOLTAGE (V) FIG.3 TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT

Features

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB.

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Published: Jul 10, 2014 |