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TSF20H120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Taiwan Semiconductor

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TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Taiwan Semiconductor - Datasheet Preview — Datasheet preview – TSF20H120C

Datasheet Details

Part number	TSF20H120C
Manufacturer	Taiwan Semiconductor
File Size	202.14 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	TSF20H120C Datasheet
Additional preview pages of the TSF20H120C datasheet.

Product details

Description

FIG.

Features

Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB.

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Published: Jan 22, 2014 |