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TSF20H150C

Manufacturer: Taiwan Semiconductor

TSF20H150C datasheet by Taiwan Semiconductor.

TSF20H150C datasheet preview

TSF20H150C Datasheet Details

Part number TSF20H150C
Datasheet TSF20H150C_TaiwanSemiconductor.pdf
File Size 225.29 KB
Manufacturer Taiwan Semiconductor
Description Trench MOS Barrier Schottky Rectifier
TSF20H150C page 2 TSF20H150C page 3

TSF20H150C Overview

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) FIG.

TSF20H150C Key Features

  • Patented Trench MOS Barrier Schottky technology
  • Excellent high temperature stability
  • Low forward voltage
  • Lower power loss/ High efficiency
  • High forward surge capability
  • pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • halogen-free, RoHS pliant Terminal:Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker tes
  • 55 to + 150
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TSF20H150C Distributor

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