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TSF20H100C - Trench MOS Barrier Schottky Rectifier

Download the TSF20H100C datasheet PDF. This datasheet also covers the TSF20H150C variant, as both devices belong to the same trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

General Description

FIG.

FIG.

Key Features

  • - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TSF20H150C_TaiwanSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Taiwan Semiconductor

Part Number Description
TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TSF20H120C Trench MOS Barrier Schottky Rectifier
TSF20H150C Trench MOS Barrier Schottky Rectifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity : As marked Mounting torque : 5 in-lbs. max. Weight：1.