TSF30H120C Overview
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 40 35 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) FIG. 3 TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE CURRENT (mA) FIG. B14 TSF30H120C Taiwan Semiconductor PACKAGE OUTLINE DIMENSI.
TSF30H120C Key Features
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- halogen-free, RoHS pliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker te
- 55 to +150
- 55 to +150 MAX. 0.93 0.75 500 20