TSF30H120C - Trench Schottky Rectifier

Product Overview

Taiwan Semiconductor

Datasheet Details

Part number	TSF30H120C
Manufacturer	Taiwan Semiconductor
File Size	231.90 KB
Description	Trench Schottky Rectifier
Datasheet	TSF30H120C Datasheet
Additional preview pages of the TSF30H120C datasheet.

Product details

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 40 35 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) FIG.2 TYPICAL FORWARD CHARACTERISTICS 100 30 25 20 15 10 5 0 0 25 50 75 100 (oC) 10 Tj=150oC 1 Tj=125oC Tj=100oC WITH HEATSINK 4in x 6in x 0.25in Al-Plate 125 150 0.1 Tj=25oC 0.01 0 0.2 0.4 0.6 0.8 1 1.2 FORWARD VOLTAGE (V) CASE TEMPERATURE FIG.3 TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE CURRENT (

Features

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB.

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Published: Jul 10, 2014 |