Download TSF30H120C Datasheet PDF
TSF30H120C page 2
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TSF30H120C page 3
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TSF30H120C Key Features

  • Patented Trench MOS Barrier Schottky technology
  • Excellent high temperature stability
  • Low forward voltage
  • Lower power loss/ High efficiency
  • High forward surge capability
  • pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition
  • halogen-free, RoHS pliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker te
  • 55 to +150
  • 55 to +150 MAX. 0.93 0.75 500 20

TSF30H120C Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 40 35 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) FIG. 3 TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE CURRENT (mA) FIG. B14 TSF30H120C Taiwan Semiconductor PACKAGE OUTLINE DIMENSI.