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TSM080N03E - N-Channel Power MOSFET

Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Features

  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • G-S ESD Protection Diode Embedded.

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Full PDF Text Transcription

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TSM080N03E Taiwan Semiconductor N-Channel Power MOSFET 30V, 55A, 8mΩ FEATURES ● Fast switching ● 100% EAS Guaranteed ● Green Device Available ● G-S ESD Protection Diode Embedded APPLICATION ● Vcore / MB ● POL Application ● SMPS 2nd SR KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 30 8 12.5 7.5 V mΩ nC PDFN56 Notes: Moisture sensitivity level: level 3.
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