Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 185A, 1.8mΩ
Features
- Low RDS(ON) to minimize conductive losses
- Low gate charge for fast power switching
- 100% UIS and Rg tested
- pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
RDS(on) (max)
VGS = 10V VGS = 4.5V
Qg
30 1.8 2.4 28
V mΩ nC
APPLICATIONS
- DC-DC Converters
- Battery Power Management
- ORing FET/Load Switching
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per...