Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
40V, 121A, 3.3mΩ
Features
- Low RDS(ON) to minimize conductive losses
- Logic level
- Low gate charge for fast power switching
- 100% UIS and Rg tested.
- 175°C Operating Junction Temperature
- pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
APPLICATIONS
- BLDC Motor Control
- Battery Power Management
- DC-DC converter
- Secondary Synchronous Rectification
PDFN56
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VGS = 10V
RDS(on) (max) mΩ
VGS = 4.5V
Qg
40 nC
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM...