Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 80A, 3.8mΩ
Features
- 100% avalanche tested
- Fast switching
- Pb-free plating
- RoHS pliant
- Halogen-free mold pound
APPLICATION
- Mobile device DC-DC conversion
- Point of Load (POL) DC-DC
- Secondary Switch Rectification
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS 30 V
RDS(on) (max)
VGS =10V
3.8 mΩ
VGS =4.5V
Qg 24 nC
PDFN33
Notes: Moisture sensitivity level: level 3. Per...