TSM10N80CI - 800V N-Channel Power MOSFET

This page provides the datasheet information for the TSM10N80CI, a member of the TSM10N80 800V N-Channel Power MOSFET family.

Product Overview

Taiwan Semiconductor

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Datasheet Details

Part number	TSM10N80CI
Manufacturer	Taiwan Semiconductor
File Size	497.95 KB
Description	800V N-Channel Power MOSFET
Datasheet	TSM10N80CI Datasheet
Additional preview pages of the TSM10N80CI datasheet.

TSM10N80CI Product details

Description

The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

Low RDS(ON) 1.05Ω (Max. ) Low gate charge typical @ 53nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM10N80CZ C0 TSM10N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pc / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanch.

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Published: Jul 10, 2014 |