Download TSM1NB60CP Datasheet PDF
Taiwan Semiconductor
TSM1NB60CP
FEATURES - Low RDS(ON) 9.4Ω (Typ.) - Low gate charge typical @ 7.7n C (Typ.) - Low Crss typical @ 8p F (Typ.) - Ro HS pliant - Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) Ω Qg 7.7 n C APPLICATIONS - Power Supply - Lighting - Charger TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage ±30 Continuous Drain Current TC = 25°C Pulsed Drain Current (Note 1) Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note...