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TSM1NB60CP - N-Channel Power MOSFET

Key Features

  • Low RDS(ON) 9.4Ω (Typ. ).
  • Low gate charge typical @ 7.7nC (Typ. ).
  • Low Crss typical @ 8pF (Typ. ).
  • RoHS Compliant.
  • Halogen-free KEY.

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TSM1NB60CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 1.2A, 10Ω FEATURES ● Low RDS(ON) 9.4Ω (Typ.) ● Low gate charge typical @ 7.7nC (Typ.) ● Low Crss typical @ 8pF (Typ.) ● RoHS Compliant ● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 10 Ω Qg 7.7 nC APPLICATIONS ● Power Supply ● Lighting ● Charger TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC = 25°C ID 1.2 Pulsed Drain Current (Note 1) IDM 4.