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TSM1NB60S - 600V N-Channel Power MOSFET

General Description

The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • Low RDS(ON) 8Ω (Typ. ) Low gate charge typical @ 6.1nC (Typ. ) Low Crss typical @ 4.2pF (Typ. ) Block Diagram Ordering Information Part No. TSM1NB60SCT B0 TSM1NB60SCT B0G TSM1NB60SCT A3 Package TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo N-Channel MOSFET TSM1NB60SCT A3G TO-92 Note: “G” denotes for Halogen Free Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM1NB60S 600V N-Channel Power MOSFET TO-92 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● Low RDS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1nC (Typ.) Low Crss typical @ 4.2pF (Typ.) Block Diagram Ordering Information Part No.