TSM1NB60S
Description
The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Features
- -
- Low RDS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1n C (Typ.) Low Crss typical @ 4.2p F (Typ.)
Block Diagram
Ordering Information
Part No.
TSM1NB60SCT B0 TSM1NB60SCT B0G TSM1NB60SCT A3
Package
TO-92 TO-92 TO-92
Packing
1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo N-Channel MOSFET
TSM1NB60SCT A3G TO-92 Note: “G” denotes for Halogen Free
Absolute Maximum Rating (TA=25o C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
- Single Pulse Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum...
