Taiwan Semiconductor TSM2301B
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.| Part No. | TSM2301B |
|---|---|
| Datasheet | TSM2301B Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | 20V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application
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● Load Switch PA Switch P-Channel MOSFET Ordering Information Part No. TSM2301BCX RF Package SOT-23 Packing 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -20 ±8 -2.8 -8 -0.72 0.9 0.57 +150 - 55 to +150 Unit V V A A A W o o C C
THERMAL PERFORMANCE
Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. c. Surface Mounted on FR4 Board, Symbol TL R...
