Taiwan Semiconductor TSM2301
20V P-Channel Enhancement Mode MOSFET
| Part No. | TSM2301 |
|---|---|
| Datasheet | TSM2301 Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | 20V P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2301CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit - 20V ±8 - 2.3 - 10 1.25 0.8 +150 - 55 to +150 Unit V V A A W o o C CTHERMAL PERFORMANCE
Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rθja Limit 5 100 Unit S o C/W TSM2301 1-1 2003/12 rev. CELECTRICAL CHARACTERISTICS
Ta = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown...
