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TSM2303 Datasheet PDF

Taiwan Semiconductor TSM2303

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Part No. TSM2303
Datasheet TSM2303 Download
Manufacturer
Taiwan Semiconductor
Description P-Channel Power MOSFET
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TSM2303 datasheet page 1 preview

FEATURES

● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance Application
● Portable Devices
● High Speed Switch Ordering Information Part No. Package Packing TSM2303CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes Halogen Free Product. Block Diagram P-Channel MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation TA=25oC TA=75oC Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ TJ, TSTG

THERMAL PERFORMANCE

Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on a 1 in2 pad of 2oz Cu, t ≤ 5 sec. Symbol RӨJC RӨJA Limit -30 ±20 -1.3 -10 -1.3 0.7 0.45 +150 -55 to +150 Limit 80 140 Unit V...
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