Taiwan Semiconductor TSM2302CX
N-Channel Power MOSFET
| Part No. | TSM2302CX |
|---|---|
| Datasheet | TSM2302CX Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(ON) to minimize conductive losses● Low gate charge for fast power switching
● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Load switch● Backlights KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 4.5V VGS = 2.5V Qg 20 65 95 7.8 V mΩ nC SOT-23 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current Total Power Dissipation Total Power Dissipation TC = 25°C TA = 25°C TC = 25°C TC = 125°C TA = 25°C TA = 125°C VGS ID IDM PD PD ±8 3.9 3.2 15.6 1.5 0.3 1 0.2 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 UNIT V V A A W W °C THERMAL PERFOR
