Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
20V, 3.9A, 65mΩ
Features
- Low RDS(ON) to minimize conductive losses
- Low gate charge for fast power switching
- pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
APPLICATIONS
- Load switch
- Backlights
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
RDS(on) (max)
VGS = 4.5V VGS = 2.5V
Qg
20 65 95 7.8
V mΩ nC
SOT-23
Note: MSL 3 (Moisture Sensitivity Level) per...
