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TSM2307CX - 30V P-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance.

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TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 95 140 Qg 10 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No.