Datasheet Summary
20V Dual N-Channel MOSFET w/ESD Protected
SOT-26
Pin Definition: 1. Source 1 6. Gate 1 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
20 @ VGS = 4.5V 20 28 @ VGS = 2.5V
ID (A)
6 5
Features
- -
- Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM 2KV
Block Diagram
Application
- - Portable Applications Battery Management
Ordering Information
Part No.
TSM2611EDCX6 RFG
Package
SOT-26
Packing
3Kpcs / 7” Reel
` Dual N-Channel MOSFET
Note: “G” denotes Halogen Free...