TSM2611ED Description
TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: Gate 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 @ VGS = 4.5V 20 28 @ VGS = 2.5V ID (A) 6.
TSM2611ED Key Features
- Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM 2KV
- Portable