Datasheet4U Logo Datasheet4U.com

TSM2611ED - 20V Dual N-Channel MOSFET

Description

only.

No license, express or implied, to any intellectual property rights is granted by this document.

Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM 2KV Block Diagram.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSM200 Surface Mount Devices SPSEMI
TSM221 DUAL CMOS RAIL TO RAIL OPERATIONAL AMPLIFIER AND DUAL CMOS COMPARATOR STMicroelectronics
TSM2301 20V P-Channel Enhancement Mode MOSFET Taiwan Semiconductor Company
TSM2301B 20V P-Channel MOSFET Taiwan Semiconductor Company
TSM2302 20V N-Channel Enhancement Mode MOSFET Taiwan Semiconductor Company

Other Datasheets by Taiwan Semiconductor

Part Number Description
TSM260P02 P-Channel Power MOSFET
TSM260P02CX6 P-Channel Power MOSFET
TSM200N03D Dual N-Channel MOSFET
TSM20N50 500V N-Channel Power MOSFET
TSM20N50CN 500V N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: 1. Source 1 6. Gate 1 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 @ VGS = 4.5V 20 28 @ VGS = 2.5V ID (A) 6 5 Features ● ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM 2KV Block Diagram Application ● ● Portable Applications Battery Management Ordering Information Part No. TSM2611EDCX6 RFG Package SOT-26 Packing 3Kpcs / 7” Reel ` Dual N-Channel MOSFET Note: “G” denotes Halogen Free Product.
Published: |