Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 2A, 4.4Ω
Features
- Advanced planar process
- 100% avalanche tested
- Pb-free plating
- pliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
600 V 4.4 Ω
Qg 9.4 nC
APPLICATION
- Power Supply
- Lighting
TO-220
ITO-220
TO-251(IPAK)
TO-252(DPAK)
NotTRSecMoT2SmNMBm2e60NndBCe6Zd0CI
Notes: MSL 3 (Moisture Sensitivity Level) per...