Datasheet4U Logo Datasheet4U.com

TSM35N10 - 100V N-Channel Power MOSFET

General Description

only.

No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

  • Advanced Trench Technology Low RDS(ON) 37mΩ (Max. ) Low gate charge typical @ 34nC (Typ. ) Low Crss typical @ 45pF (Typ. ) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSM35N03 Straight 1-Row BergStik II Headers Taiwan Semiconductor Company
TSM3400 30V N-Channel MOSFET Taiwan Semiconductor Company
TSM3401 P-Channel Power MOSFET Taiwan Semiconductor Company
TSM3404 30V N-Channel MOSFET Taiwan Semiconductor Company
TSM3424 30V N-Channel MOSFET Taiwan Semiconductor Company

Other Datasheets by Taiwan Semiconductor

Part Number Description
TSM35N10CP 100V N-Channel Power MOSFET
TSM300NB06CR N-Channel Power MOSFET
TSM300NB06DCR Dual N-Channel Power MOSFET
TSM320N03CX N-Channel Power MOSFET
TSM340N06 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A) 32 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70 35 61 83.3 53.3 2 1.3 -55 to +150 -55 to +150 Unit V V Continuous Drain Current ID A Drain Current-Pulsed Note 1 Avalanche Current, L=0.