TSM35N10 Overview
TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A).
TSM35N10 Key Features
- Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.)