TSM35N10CP Datasheet 100v N-channel Power MOSFET

Manufacturer: Taiwan Semiconductor

Overview: TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Advanced Trench Technology Low RDS(ON) 37mΩ (Max. ) Low gate charge typical @ 34nC (Typ. ) Low Crss typical @ 45pF (Typ. ) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70.