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TSM35N10CP - 100V N-Channel Power MOSFET

Download the TSM35N10CP datasheet PDF. This datasheet also covers the TSM35N10 variant, as both devices belong to the same 100v n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Advanced Trench Technology Low RDS(ON) 37mΩ (Max. ) Low gate charge typical @ 34nC (Typ. ) Low Crss typical @ 45pF (Typ. ) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TSM35N10-TaiwanSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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TSM3404 30V N-Channel MOSFET Taiwan Semiconductor Company
TSM3424 30V N-Channel MOSFET Taiwan Semiconductor Company

Other Datasheets by Taiwan Semiconductor

Part Number Description
TSM35N10 100V N-Channel Power MOSFET
TSM300NB06CR N-Channel Power MOSFET
TSM300NB06DCR Dual N-Channel Power MOSFET
TSM320N03CX N-Channel Power MOSFET
TSM340N06 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A) 32 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70 35 61 83.3 53.3 2 1.3 -55 to +150 -55 to +150 Unit V V Continuous Drain Current ID A Drain Current-Pulsed Note 1 Avalanche Current, L=0.