TSM650N15CR Datasheet | Taiwan Semiconductor

Taiwan Semiconductor N-Channel Power MOSFET 150V, 24A, 65mΩ Features - Low RDS(ON) to minimize conductive losses - Low gate charge for fast power switching - 100% UIS and Rg tested - pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 APPLICATIONS - PoE - LED Lighting - Tele Power KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VDS VGS = 10V VGS = 6V Qg 150 65 80 24 V mΩ nC PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per...