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TSM650N15CR - N-Channel Power MOSFET

Features

  • Low RDS(ON) to minimize conductive losses.
  • Low gate charge for fast power switching.
  • 100% UIS and Rg tested.
  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21.

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Full PDF Text Transcription

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TSM650N15CR Taiwan Semiconductor N-Channel Power MOSFET 150V, 24A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● PoE ● LED Lighting ● Telecom Power KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VDS VGS = 10V VGS = 6V Qg 150 65 80 24 V mΩ nC PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy
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