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TSM60N03 - N-Channel Power MOSFET

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Description

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Features

  • Advanced Trench Technology.
  • Low RDS(ON) 4.5mΩ (Max. ).
  • Low gate charge typical @ 12nC (Typ. ).
  • Low Crss typical @ 140pF (Typ. ) Ordering Information Part No. Package Packing TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25℃ VGS Continuous Drain Current Drain Current-Pulse.

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Datasheet Details

Part number TSM60N03
Manufacturer Taiwan Semiconductor
File Size 263.64 KB
Description N-Channel Power MOSFET
Datasheet download datasheet TSM60N03 Datasheet
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Full PDF Text Transcription

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TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N03 30V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.5 @ VGS =10V ID (A) 60 Features ● Advanced Trench Technology ● Low RDS(ON) 4.5mΩ (Max.) ● Low gate charge typical @ 12nC (Typ.) ● Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Package Packing TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25℃ VGS Continuous Drain Current Drain Current-Pulsed * TC = 70℃ TA = 25℃ TA = 70℃ ID IDM Avalanche Current, L = 0.1mH IAS, IAR Avalanche Energy, L = 0.
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