Datasheet4U Logo Datasheet4U.com

TSM60N03 - N-Channel Power MOSFET

General Description

only.

No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

  • Advanced Trench Technology.
  • Low RDS(ON) 4.5mΩ (Max. ).
  • Low gate charge typical @ 12nC (Typ. ).
  • Low Crss typical @ 140pF (Typ. ) Ordering Information Part No. Package Packing TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25℃ VGS Continuous Drain Current Drain Current-Pulse.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSM600-250F Resettable PPTC Littelfuse
TSM600-250F-RA Resettable PPTC Littelfuse
TSM600-400F Resettable PPTC Littelfuse
TSM6025 Low-Power/Low-Dropout Precision Voltage Reference Touchstone Semiconductor
TSM6025 Low-Power/Low-Dropout Precision Voltage Reference Silicon Laboratories

Other Datasheets by Taiwan Semiconductor

Part Number Description
TSM60N06 N-Channel Power MOSFET
TSM60N1R4 N-Channel Power MOSFET
TSM60N380 N-Channel Power MOSFET
TSM60N380CZ N-Channel Power MOSFET
TSM60N600 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N03 30V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.5 @ VGS =10V ID (A) 60 Features ● Advanced Trench Technology ● Low RDS(ON) 4.5mΩ (Max.) ● Low gate charge typical @ 12nC (Typ.) ● Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Package Packing TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25℃ VGS Continuous Drain Current Drain Current-Pulsed * TC = 70℃ TA = 25℃ TA = 70℃ ID IDM Avalanche Current, L = 0.1mH IAS, IAR Avalanche Energy, L = 0.