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TSM60N1R4 - N-Channel Power MOSFET

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Description

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Features

  • Super-Junction technology.
  • High performance due to small figure-of-merit.
  • High ruggedness performance.
  • High commutation performance.

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Datasheet preview – TSM60N1R4

Datasheet Details

Part number TSM60N1R4
Manufacturer Taiwan Semiconductor
File Size 560.08 KB
Description N-Channel Power MOSFET
Datasheet download datasheet TSM60N1R4 Datasheet
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Full PDF Text Transcription

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TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Key Parameter Performance Parameter Value VDS RDS(on) (max) Qg 600 1.4 7.7 Unit V Ω nC Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Application ● Power Supply ● Lighting Ordering Information Part No. Package Packing TSM60N1R4CH C5G TO-251 75pcs / Tube TSM60N1R4CP ROG TO-252 2.
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