TSM60N600 - N-Channel Power MOSFET

Taiwan Semiconductor

General Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

Super-Junction technology.
High performance due to small figure-of-merit.
High ruggedness performance.
High commutation performance.

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TSM60N600 n-channel power mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM60N600
Manufacturer	Taiwan Semiconductor
File Size	1.00 MB
Description	N-Channel Power MOSFET
Datasheet	TSM60N600 Datasheet

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Full PDF Text Transcription (Reference)

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ITO-220 TO-252 (DPAK) TSM60N600 600V, 8A, 0.6Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS 600 RDS(on) (max) Qg 0.6 13 Unit V Ω nC Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Application ● Power Supply. ● Lighting Ordering Information Part No. Package Packing TSM60N600CI C0G ITO-220 50pcs / Tube TSM60N600CH C5G TO-251 75pcs / Tube TSM60N600CP ROG TO-252 2.