• Part: TSM60N06
  • Description: N-Channel Power MOSFET
  • Manufacturer: Taiwan Semiconductor
  • Size: 262.33 KB
Download TSM60N06 Datasheet PDF
TSM60N06 datasheet preview
TSM60N06 page 2
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TSM60N06 page 3
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TSM60N06 Key Features

  • Advanced Trench Technology
  • Low RDS(ON) 7.3mΩ (Max.)
  • Low gate charge typical @ 81nC (Typ.)
  • Low Crss typical @ 339pF (Typ.)

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