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TSM60N06 - N-Channel Power MOSFET

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Description

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Features

  • Advanced Trench Technology.
  • Low RDS(ON) 7.3mΩ (Max. ).
  • Low gate charge typical @ 81nC (Typ. ).
  • Low Crss typical @ 339pF (Typ. ) Ordering Information Part No. Package Packing TSM60N06CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Note 1 Avalanche Cur.

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Datasheet Details

Part number TSM60N06
Manufacturer Taiwan Semiconductor
File Size 262.33 KB
Description N-Channel Power MOSFET
Datasheet download datasheet TSM60N06 Datasheet
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Full PDF Text Transcription

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TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 7.3 @ VGS =10V ID (A) 66 Features ● Advanced Trench Technology ● Low RDS(ON) 7.3mΩ (Max.) ● Low gate charge typical @ 81nC (Typ.) ● Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing TSM60N06CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Note 1 Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.
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