Datasheet Summary
Taiwan Semiconductor
N- and P-Channel 30V (D-S) Power MOSFET
Features
- Low RDS(ON) to minimize conductive losses
- Low gate charge for fast power switching
- 100% UIS and Rg tested
- pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
APPLICATIONS
- DC-DC Converters
- Power Routing
- Motor Drives
KEY PERFORMANCE PARAMETERS
PARAMETER TYPE VALUE UNIT
N-ch
P-ch
-30
VGS = 10V
N-ch
RDS(on) VGS = 4.5V
(max) VGS = -10V P-ch
24 mΩ
VGS = -4.5V
N-ch
Qg
P-ch
11 nC
SOP-8
Note: MSL 1 (Moisture Sensitivity Level) per...