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TSM8568CS - N- and P-Channel Power MOSFET

Key Features

  • Low RDS(ON) to minimize conductive losses.
  • Low gate charge for fast power switching.
  • 100% UIS and Rg tested.
  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21.

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TSM8568CS Taiwan Semiconductor N- and P-Channel 30V (D-S) Power MOSFET FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Power Routing ● Motor Drives KEY PERFORMANCE PARAMETERS PARAMETER TYPE VALUE UNIT N-ch 30 VDS P-ch -30 V VGS = 10V N-ch 16 RDS(on) VGS = 4.5V 20 (max) VGS = -10V P-ch 24 mΩ VGS = -4.