Description
Green compound
2
Version:B1704
TSSD10L100SW - TSSD10L200SW
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
15
Fig.2 Typical Junction Capacitance
10000 TSSD10L100SW
10
1000
CAPACITANCE (pF)
AVERAGE FORWARD CURRENT (A)
5
10
Features
- Patented Trench Schottky technology.
- Low power loss / high efficiency.
- Ideal for automated placement.
- Guard ring for over-voltage protection.
- High forward surge capability.
- Compliant to RoHS directive 2011/65/EU and
In accordance to WEEE 2002/96/EC.
- Halogen-free according to IEC 61249-2-21.
TSSD10L150SW Datasheet
