• Part: UG2004PT
  • Description: 200V High Power Density Ultra Fast Rectifier
  • Manufacturer: Taiwan Semiconductor
  • Size: 414.81 KB
Download UG2004PT Datasheet PDF
Taiwan Semiconductor
UG2004PT
UG2004PT is 200V High Power Density Ultra Fast Rectifier manufactured by Taiwan Semiconductor.
FEATURES - Dual rectifier construction, positive center-tap - Ultrafast recovery time - Low reverse recovery current - Low forward voltage - Reduces switching losses - Reduces conduction losses - Low thermal resistance ideal solution for high operation temperature - pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 12 3 TO-247AD (TO-3P) MECHANICAL DATA Case: TO-247AD (TO-3P) Molding pound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green pound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: Maximum 1.13 Nm (10 lbf-in) Weight: 6.1g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage VRMS Maximum DC blocking voltage Maximum average forward rectified current IF(AV) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM Maximum instantaneous forward voltage (Note 1) IF= 10 A Maximum reverse current @ rated VR Maximum reverse recovery time (Note 2) trr Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300 μs, 1% duty cycle RθJC TJ TSTG Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 200 25 1.5 - 55 to +175 - 55 to...