TSF30U45C Datasheet | Taiwan Semiconductor

Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier Features - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding pound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS pliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5...