TSM1N60L
TSM1N60L is 600V N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
600V N-Channel Power MOSFET
TO-252
TO-251
Pin Definition: 1. Gate
2. Drain 3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 12 @ VGS =10V
ID (A)
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge...
