TSM2611ED Datasheet | Taiwan Semiconductor

20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: 1. Source 1 6. Gate 1 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 @ VGS = 4.5V 20 28 @ VGS = 2.5V ID (A) 6 5 Features - - - Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM 2KV Block Diagram Application - - Portable Applications Battery Management Ordering Information Part No. TSM2611EDCX6 RFG Package SOT-26 Packing 3Kpcs / 7” Reel ` Dual N-Channel MOSFET Note: “G” denotes Halogen Free...