Datasheet4U Logo Datasheet4U.com

TDM3432 - N-Channel Enhancement Mode MOSFET

Description

The  TDM3432  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.

This  device  is  suitable  for  use  as  a  load  switch  or  in    PWM  applications.

Features

  •  .
  • RDS(ON) .

📥 Download Datasheet

Datasheet preview – TDM3432

Datasheet Details

Part number TDM3432
Manufacturer Techcode
File Size 372.77 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM3432 Datasheet
Additional preview pages of the TDM3432 datasheet.

📁 Similar Datasheet

  • TDM300 - Twin Diode Module (Microsemi Corporation)
  • TDM30002 - Twin Diode Module (Microsemi Corporation)
  • TDM30004 - Twin Diode Module (Microsemi Corporation)
  • TDM30006 - Twin Diode Module (Microsemi Corporation)
  • TDM30008 - Twin Diode Module (Microsemi Corporation)
  • TDM30010 - Twin Diode Module (Microsemi Corporation)
  • TDM30012 - Twin Diode Module (Microsemi Corporation)
  • TDM3021 - Triac Driver (Solid State Optronic)
  • TDM3022 - Triac Driver (Solid State Optronic)
  • TDM3042 - Triac Driver (Solid State Optronic)
Other Datasheets by Techcode
  • TDM3430 - N-Channel Enhancement Mode MOSFET
  • TDM3434 - N-Channel Enhancement Mode MOSFET
  • TDM3435 - P-Channel Enhancement Mode MOSFET
  • TDM3436 - N-Channel Enhancement Mode MOSFET
  • TDM3404 - N-Channel Enhancement Mode MOSFET
  • TDM3405 - P-Channel Enhancement Mode MOSFET
  • TDM3407 - P-Channel Enhancement Mode MOSFET
  • TDM3408 - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
T  echcode®       N-Channel Enhancement Mode MOSFET DESCRIPTION  The  TDM3432  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This  device  is  suitable  for  use  as  a  load  switch  or  in    PWM  applications.  GENERAL FEATURES     RDS(ON) < 4.1mΩ @ VGS=4.5V    RDS(ON) < 3.
Published: |