Techcode TDM3435
The TDM3435 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | TDM3435 |
|---|---|
| Datasheet | TDM3435 Download |
| Manufacturer |  Techcode |
| Description | P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● ‐30V/‐68A● RDS(ON) < 15mΩ @ VGS=‐4.5V RDS(ON) < 9mΩ @ VGS=‐10V
● Reliable and Rugged
● HBM ESD capability level of 8KV typical
● Lead free product is available
● TO252 Package Application
● PWM applications
● Load switch
● Power management
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Drain‐Source Voltage Gate‐Source Voltage Diode Continuous Forward Current Pulsed Drain Current Tested (note1) Continuous Drain Current Maximum Power Dissipation Continuous Drain Current(VGS=‐10V) (note1) Maximum Power Dissipation Thermal Resistance‐Junction to Ambient (note1) Thermal Resistance‐Junction to Case (note2) Maximum Junction Temperature Storage Temperature Range Avalanche Current, Single pulse Avalanche Energy, Single pulse Symbol VDS VGS IS(TC=25℃) IDM(TC=25℃) ID (TC=25℃) ID (TC=100℃) PD(TC=25℃) PD(TC=100℃) ID (TA=25℃) ID (TA=70℃) PD(TA=25℃) PD(TA=70℃) RθJA(t≤10s) RθJA(Steady State) RθJC TJ TSTG IAS(L=0.5mH) EAS(L=0.5mH) September 18, 2017 Tec...
