TDM3435 Datasheet | Techcode

DESCRIPTION The TDM3435 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES - ‐30V/‐68A - RDS(ON) < 15mΩ @ VGS=‐4.5V RDS(ON) < 9mΩ @ VGS=‐10V - Reliable and Rugged - HBM ESD capability level of 8KV typical - Lead free product is available - TO252 Package Application - PWM applications - Load switch - Power management ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Drain‐Source Voltage Gate‐Source Voltage Diode Continuous Forward Current Pulsed Drain Current Tested (note1) Continuous Drain Current Maximum Power Dissipation Continuous Drain Current(VGS=‐10V) (note1) Maximum Power Dissipation Thermal Resistance‐Junction to Ambient (note1) Thermal Resistance‐Junction to Case (note2) Maximum Junction Temperature Storage Temperature Range Avalanche Current, Single pulse Avalanche Energy, Single pulse Symbol VDS VGS IS(TC=25℃) IDM(TC=25℃) ID (TC=25℃) ID (TC=100℃) PD(TC=25℃) PD(TC=100℃) ID (TA=25℃) ID (TA=70℃) PD(TA=25℃) PD(TA=70℃) RθJA(t≤10s) RθJA(Steady State) RθJC TJ TSTG IAS(L=0.5m H) EAS(L=0.5m H) September 18, 2017 Techcode Semiconductor Limited 1 Rating ‐30 +25 ‐30 ‐180 ‐68 ‐43 62.5 25 ‐21.5 ‐17.2 6.25 4 20 55 2 150 ‐55 to 150 24 144 Unit V V A A A A W W A A W W ℃/W ℃/W ℃/W ℃ ℃ A m J .techcodesemi. Techcode® P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit STATIC CHARACTERISTICS Drain‐Source Breakdown Voltage BVDSS VGS=0V, ID=‐250μA ‐30 ‐ ‐ Zero Gate Voltage Drain...