TLS8103 - 132 RGB Segment x 132 Common Driver & Controller

General Description

1 ITO REQUIREMENTS51 BLOCK DIAGRAM54 FUNCTION DESCRIPTIONS 56 COMMAND TABLE 105 COMMAND DESCRIPTION 115 INITIALIZATION SEQUENCE 173 VOP CALIBRATION 177 AC CHARACTERISTICS 180 DC CHARACTERISTICS 190 ABSOLUTE MAXIMUM RATING 192 APPLICATION NOTES 194 APPLICATION INFORMATION FOR LCD PANEL (REFERE

Key Features

6 PAD ARRANGEMENT9 PAD CENTER.

📥 Download Datasheet

TLS8103 132 rgb segment x 132 common driver & controller by Teralane Semiconductor - Datasheet Preview

Datasheet Details

Part number	TLS8103
Manufacturer	Teralane Semiconductor
File Size	1.53 MB
Description	132 RGB Segment x 132 Common Driver & Controller
Datasheet	TLS8103 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TLS810B1	Ultra Low Quiescent Current Linear Voltage Regulator	Infineon
TLS810C1EJV33	Ultra Low Quiescent Current Linear Voltage Regulator	Infineon
TLS810D1EJV50	Ultra Low Quiescent Current Linear Voltage Regulator	Infineon
TLS805x030C1A	Wet Tantalum Capacitors	Mallory
TLS820D2ELVSE	Low dropout linear voltage regulator	Infineon

Other Datasheets by Teralane Semiconductor

Part Number	Description
TLS3001	3-channel constant current LED driver
TLS3008	3-channel constant current LED driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Teralane Semiconductor Product Data Sheet TLS8103 132 RGB Segment x 132 Common Driver & Controller For 65536 Colors STN LCD Version 2.3 Jul., 2007 Notice: Specifications and information contained in this Datasheet are subject to change without notice. No part of this Datasheet may be copied or transmitted in any form or by any means, electronic or non-electronic media, for any purpose, without the written permission of Teralane Semiconductor Inc. Precautions for light: Light has the effect of causing the electrons of semiconductor to move and may change the characteristics of semiconductor devices.