CS48N80 - N-Channel Trench Process Power MOSFET

Thinki Semiconductor

General Description

The CS48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

VDS=70V；ID=87A@ VGS=10V； RDS(ON).

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CS48N80 n-channel trench process power mosfet by Thinki Semiconductor - Datasheet Preview

Datasheet Details

Part number	CS48N80
Manufacturer	Thinki Semiconductor
File Size	742.47 KB
Description	N-Channel Trench Process Power MOSFET
Datasheet	CS48N80 Datasheet

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CS48N80 ® Pb Free Plating Product CS48N80 Pb 70V,87A N-Channel Trench Process Power MOSFET General Description The CS48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=87A@ VGS=10V； RDS(ON)<5.8mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS48N80 (TO-220 HeatSink) G DS Schematic Diagram VDSS = 70V IDSS = 87A RDS(ON) = 5.5mΩ Table 1.