Datasheet Details
| Part number | F60UP20DN |
|---|---|
| Manufacturer | Thinki Semiconductor |
| File Size | 708.00 KB |
| Description | Common Cathode Fast Recovery Epitaxial Diode |
| Datasheet | F60UP20DN-ThinkiSemiconductor.pdf |
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Overview: F60UP20DN ® F60UP20DN Pb Pb Free Plating Product 60.0 Ampere,200 Volt mon Cathode Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic.
| Part number | F60UP20DN |
|---|---|
| Manufacturer | Thinki Semiconductor |
| File Size | 708.00 KB |
| Description | Common Cathode Fast Recovery Epitaxial Diode |
| Datasheet | F60UP20DN-ThinkiSemiconductor.pdf |
|
|
|
F60UP20DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C.
Reverse Voltage 200 V V RRM Maximum Repetitive Reverse Voltage 200 V I F(AV) Average Forward Current TC=100°C, Per Diode TC=100°C, Per Package 30 A 60 A I F(RMS) I FSM RMS Forward Current Non-Repetitive Surge Forward Current TC=100°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine 53 300 A A PD Power Dissipation 156 W TJ Junction Temperature -40 to +150 °C T STG Torque Storage Temperature Range Module-to-Sink Remended（M3） -40 to +150 1.1 °C N·m R θJC Thermal Resistance Weight ELECTRICAL CHARACTERISTICS Junction-to-Case 0.8 °C /W 6.0 g TC=25°C unless otherwise specified Symbol Parameter IRM Reverse Leakage Current Test Conditions VR=200V VR=200V, TJ=125°C Min.
| Part Number | Description |
|---|---|
| F60UP30DN | Ultra Fast Recovery Rectifiers |
| F60SA60DS | 16.0 Ampere Insulated Stealth Dual Series Connection Fast Recovery Rectifiers |